深圳大时代电子有限公司
DMG4N60SJ3
- 型号
- DMG4N60SJ3
- 制造商
- Diodes Incorporated
- 描述
- MOSFET NCH 600V 3A TO251
- 数据表
-
DMG4N60SJ3.pdf
- 所属分类
- 家庭
- Transistors - FETs, MOSFETs - Arrays
- 系列
- -
支付方式
送货服务
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规格
| Part Status | Active |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 25V |
| Power - Max | 41W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Supplier Device Package | TO-251 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- 发送邮件
- ldx1688@szdsddz.com or 在线查询
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